| 摘要 |
FIELD: engineering of semiconductor devices with self-protection from disruption during restoration of locking properties, namely, engineering of thyristors, including photo-thyristors. ^ SUBSTANCE: in semiconductor device with self-protection from disruption during restoration of locking properties, based on silicon plate with electro-conductance of n-type with two main surfaces, containing emitter p-layer, base n-layer, base p-layer, main emitter n-layer, forming a main thyristor zone between electrodes of anode and cathode, several discontinuous thyristor zones, within limits of which lifetime of unbalanced charge carriers in base n-layer is greater, than within limits of main thyristor zone, and external control zone, while anode electrode, emitter p-layer, base n-layer and base p-layer are common for main thyristor zone, discontinuous thyristor zones and external control zone, discontinuous thyristor zones are located inside main thyristor zone with output to main surfaces, while cathode electrode with adjacent main emitter n-layer are common both for main thyristor zone and for discontinuous thyristor zones, while lifetimes of unbalanced charge carriers in base n-layer within limits of discontinuous thyristor zones and within limits of main thyristor zone are selected on basis of certain conditions. ^ EFFECT: prevented indeterminacy during engineering of device in relation with certain values of lifetime of unbalanced charge carriers in base n-layers of discontinuous thyristor zones and main thyristor zone, and also dimensions of discontinuous thyristor zones and their amount, increased reliability of device in case of its switching under conditions of incomplete restoration of locking properties with simultaneous preservation of load capacity. ^ 2 dwg |
