COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR STRUCTURE,申请号KR20077002248-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR STRUCTURE
摘要
申请公布号	KR20070038128(A)	申请公布日期	2007.04.09
申请号	KR20077002248	申请日期	2007.01.29
申请人	FREESCALE SEMICONDUCTOR, INC.	发明人	PASSLACK MATTHIAS
分类号	H01L27/092	主分类号	H01L27/092
代理机构		代理人
主权项
地址

您可能感兴趣的专利

SHELL-AND TUBE HEAT-MASS-TRANSFER APPARATUS

APPARATUS FOR HEAT TREATMENT OF PULVERULENT MATERIALS

APPARATUS FOR CLEANING AIR FROM DUST

METHOD OF DETERMINING MOLECULAR MASS OF HUMIC ACIDS

METHOD OF MAGNETIC PATTERN CHECKING OF ARTICLES FROM FERROMAGNETIC MATERIALS

DEVICE FOR MEASURING VOLUME OF LOOSE MATERIALS

METHOD OF OPERATION OF I.C.ENGINE AND I.C.ENGINE

CORE-TYPE AUGER DRILL

ARRANGEMENT FOR RAISING STRUCTURES

STAND FOR MAKING REINFORCED FERROCONCRETE ARTICLES

SELF-PROPELLED VIBRATION PLATE

DEVICE FOR MOVING TRACK LATTICE

METHOD OF PRODUCING SLOWLY-SOLUBLE GRANULATED POTASSIUM FERTILIZER

METHOD OF PREPARING BINDER

COMPLEX ADDITIVE TO SLAG-CONCRETE MIX

METHOD OF DETERMINING SALMONELLA ENTEROTOXINE

METHOD OF PRODUCING CADMIUM DIPHOSPHATE