METHOD FOR FORMING HIGHLY-ORIENTATED SILICON FILM, METHOD FOR FABRICATING 3D SEMICONDUCTOR DEVICE, AND 3D SEMICONDUCTOR DEVICE

摘要

Provided are methods of forming a highly oriented silicon film and a three-dimensional semiconductor device, and a three-dimensional semiconductor device. The method of forming a highly oriented silicon film includes forming a highly oriented AIN film oriented in a predetermined direction on a substrate, forming a highly oriented Al 2 O 3 layer on a surface of the AIN film by oxidizing the highly oriented AIN film, and growing a silicon film on the highly oriented Al 2 O 3 layer.