Cold cathode field emitter forming method for e.g. high definition image display, involves forming stud formed as single crystal with substrate, disposing dielectric layer on substrate, and applying conductive grid layer on dielectric layer

摘要

The method involves forming a stud (120) on a semi-conductor substrate (110), where the stud is formed as single crystal with the substrate. A dielectric layer (130) is disposed on the substrate and defines a passage (132) around the stud. A conductive grid layer (140) is applied on the dielectric layer, such that the grid layer defines an opening which is juxtaposed to the passage. A nanostructure (150) e.g. carbon nanotube, is grown towards the height from an upper surface of the stud. A mask is applied to a selected region of the substrate, and the substrate is etched around the mask.