| 摘要 |
PROBLEM TO BE SOLVED: To provide an inverter circuit used for an electrooptical device. SOLUTION: An N-channel thin film transistor of the inverter has a channel region, a semiconductor layer provided with a plurality of N-type impurity regions, a gate insulating film provided on the semiconductor layer, and a gate electrode provided on the gate insulating film and overlapping at least one of N-type impurities. A P-channel thin film transistor of the inverter circuit has a channel region, a semiconductor layer provided with a plurality of P-type impurity regions, a gate insulating film provided on the semiconductor layer, and a gate electrode provided on the gate insulating film. COPYRIGHT: (C)2007,JPO&INPIT |
