发明名称 Method of fabricating a release substrate
摘要 The invention relates to a method of fabricating a release substrate produced from semiconductor materials, the method comprising creating a reversible connection between two substrate release layers characterized in that the reversible connection is formed by a connecting layer produced using a first material as the basis, the connecting layer further comprising a nanoparticle concentrating zone of a second material disposed to facilitate release of the substrate, the first and second materials being selected to maintain the bonding energy of the reversible connection substantially constant even when the substrate is exposed to heat treatment.
申请公布号 US2007077729(A1) 申请公布日期 2007.04.05
申请号 US20060481696 申请日期 2006.07.05
申请人 RAYSSAC OLIVIER;AKATSU TAKESHI;RAYSSAC PIERRE;RAYSSAC GISELE 发明人 RAYSSAC OLIVIER;AKATSU TAKESHI;RAYSSAC PIERRE;RAYSSAC GISELE
分类号 H01L21/30;H01L21/762 主分类号 H01L21/30
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