发明名称 |
Cobalt silicon contact barrier metal process for high density semiconductor power devices |
摘要 |
This invention discloses an improved trenched metal oxide semiconductor field effect transistor (MOSFET) cell that includes a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The MOSFET cell further includes a source contact opening opened on top of an area extended over the body region and the source region through a protective insulation layer wherein the area further has a cobalt-silicide layer disposed near a top surface of the substrate. The MOSFET cell further includes a Ti/TiN conductive layer covering the area interfacing with the cobalt-silicide layer over the source contact opening. The MOSFET cell further includes a source contact metal layer formed on top of the Ti/TiN conductive layer ready to form source-bonding wires thereon.
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申请公布号 |
US2007075360(A1) |
申请公布日期 |
2007.04.05 |
申请号 |
US20050240255 |
申请日期 |
2005.09.30 |
申请人 |
ALPHA &OMEGA SEMICONDUCTOR, LTD. |
发明人 |
CHANG HONG;LI TIESHENG;TAI SUNG-SHAN;NG DANIEL;BHALLA ANUP |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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