| 摘要 |
An image sensor is provided. The image sensor includes a photodiode disposed in a semiconductor substrate and a first device isolating layer formed having an impurity with a conductivity type in the semiconductor substrate adjacent to the photodiode. The image sensor further includes a second device isolating layer composed of an insulating layer that covers the first device isolating layer. In addition, the image sensor further includes an interlayer insulating layer formed on the second device isolating layer and which is composed of a material with refractivity greater than that of the second device isolating layer.
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