| 摘要 |
The invention relates to a vertical integrated JBS-SiC semiconductor component, in particular to a power semiconductor component, comprising a high-doped SiC semiconductor body of a first conductivity type, a low-doped drift area of the first conductivity type, which is located on said semiconductor body on a transmitter side and which is at least partially adjacent to a first surface, at least one emitter area of a second conductivity type, which is integrated into the drift area on the first surface side and is adjacent thereto, an intermediate layer of the first conductivity type which is arranged in the drift area, at a distance from the emitter areas, laterally crosses the entire drift area and whose dopant concentration is greater than that of the drift area. |
