发明名称 |
Semiconductor memory device and driving method thereof |
摘要 |
A semiconductor memory device prevents deterioration of refresh operation caused by sensing noise and a driving method thereof. First pull-down and second pull-down voltages which are different from each other are as a pull-down voltage of a bit line sense amplifier. The first and the second pull-down voltages are used in different driving periods to protect data from noises caused by another memory bank. A driving period can be separated into an initial sensing period, wherein large currents are consumed and significant noise is generated, and a subsequent stable period. The driving period can be separated into a pre-precharge period and a post-precharge period.
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申请公布号 |
US2007076501(A1) |
申请公布日期 |
2007.04.05 |
申请号 |
US20060529570 |
申请日期 |
2006.09.29 |
申请人 |
KANG SANG-HEE;HAN HI-HYUN;CHO HO-YOUB |
发明人 |
KANG SANG-HEE;HAN HI-HYUN;CHO HO-YOUB |
分类号 |
G11C7/02 |
主分类号 |
G11C7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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