Halbleiterbasisbauteil mit Verdrahtungssubstrat und Zwischenverdrahtungsplatte für einen Halbleiterbauteilstapel sowie Verfahren zu deren Herstellung

摘要

A semiconductor stack and a semiconductor base device with a wiring substrate and an intermediate wiring board for a semiconductor device stack is disclosed. In one embodiment, a semiconductor chip is arranged between the intermediate wiring board and the wiring substrate, which is electrically connected by way of the wiring substrate on the one hand to external contacts on the underside of the wiring substrate and on the other hand to contact terminal areas in the edge regions of the wiring substrate. The intermediate wiring board has angled-away external flat conductors, which are electrically connected in the contact terminal areas of the wiring board. Furthermore, on the upper side of the intermediate wiring board, arranged on the free ends of the internal flat conductors are external contact terminal areas, which correspond in size and arrangement to external contacts of a semiconductor device to be stacked.