发明名称 Composition for forming silicon-cobalt film, silicon-cobalt film and method forming same
摘要 There are provided a composition and method for forming a silicon-cobalt film at low production cost without expensive vacuum equipment and high-frequency generator. The composition is a silicon-cobalt film forming composition comprising a silicon compound and a cobalt compound. A silicon-cobalt film is formed by applying this composition on a substrate and subjecting the resulting substrate to a heat treatment and/or a light treatment.
申请公布号 US2007077742(A1) 申请公布日期 2007.04.05
申请号 US20040575478 申请日期 2004.10.06
申请人 JSR CORPORATION 发明人 MATSUKI YASUO;WANG DAOHAI;SAKAI TATSUYA;IWASAWA HARUO
分类号 H01L21/4763;C07F17/02;C23C18/12;H01L21/285;H01L21/3205;H01L21/44 主分类号 H01L21/4763
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