发明名称 |
Composition for forming silicon-cobalt film, silicon-cobalt film and method forming same |
摘要 |
There are provided a composition and method for forming a silicon-cobalt film at low production cost without expensive vacuum equipment and high-frequency generator. The composition is a silicon-cobalt film forming composition comprising a silicon compound and a cobalt compound. A silicon-cobalt film is formed by applying this composition on a substrate and subjecting the resulting substrate to a heat treatment and/or a light treatment.
|
申请公布号 |
US2007077742(A1) |
申请公布日期 |
2007.04.05 |
申请号 |
US20040575478 |
申请日期 |
2004.10.06 |
申请人 |
JSR CORPORATION |
发明人 |
MATSUKI YASUO;WANG DAOHAI;SAKAI TATSUYA;IWASAWA HARUO |
分类号 |
H01L21/4763;C07F17/02;C23C18/12;H01L21/285;H01L21/3205;H01L21/44 |
主分类号 |
H01L21/4763 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|