| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a several GHz band oscillation circuit that is improved in phase noise characteristics near an oscillation frequency by reducing mutual inductance between the base of an oscillation transistor and an emitter bonding wire. <P>SOLUTION: The oscillation circuit is equipped with a first bonding wire 15 that connects the base of the oscillation transistor to a base terminal 12, and a second bonding wire 16 that connects the emitter of the oscillation transistor to an emitter terminal 13. The wiring direction of the base terminal 12 crosses that of the emitter terminal 13 at a right angle, and also the wiring direction of the first bonding wire 15 crosses that of the second bonding wire 16 at a right angle. A magnetic shielding material may be inserted between the bonding wires 15 and 16 or between the base terminal 12 and the emitter terminal 13. Mutual inductance between the bonding wires 15 and 16 can be reduced so as to obtain an oscillation circuit excellent in phase noise characteristics near an oscillation frequency. <P>COPYRIGHT: (C)2007,JPO&INPIT |
