| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition for simultaneously satisfying high sensitivity, high resolution, an excellent pattern shape and excellent line edge roughness in the positive resist composition and a pattern forming method using it used preferably in an ultra-micro lithography process such as manufacture of an ultra LSI and a high-capacity microchip and the other photo-publication process, and to provide the pattern forming method using it. <P>SOLUTION: The positive resist composition contains (A) a resin increasing solubility to an alkali developer due to the action of an acid, (B) a compound generating the acid due to irradiation with an active light or radiation, and (C) an aromatic compound having 2,000 mol.wt. or less having a lactone group. The pattern forming method using it is provided. <P>COPYRIGHT: (C)2007,JPO&INPIT |
