| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition for reducing elution to an immersion liquid of a generation acid by improving a deterioration in surface roughness in pattern formation due to liquid immersion exposure in the resist composition and a pattern forming method using it used in a semiconductor manufacturing process such as an IC, manufacture of a circuit board such as a liquid crystal and a thermal head and further a lithography process of the other photo-application, and to provide the pattern forming method using it. <P>SOLUTION: In the resist composition containing (A) a compound generating the acid due to irradiation with an active light or radiation, and (B) a resin increasing solubility to an alkali developer due to the action of the acid having a repeating unit having at least one alicyclic structure, the resin of (B) components is one having a perfuluoroalkyl group or an Si atom on the main chain terminal. <P>COPYRIGHT: (C)2007,JPO&INPIT |
