发明名称 PIEZOELECTRIC THIN FILM RESONATOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a structure of a piezoelectric thin film resonator capable of making its frequency much higher without being restricted by the acoustic impedance value of a piezoelectric substance. <P>SOLUTION: This piezoelectric thin film resonator 10A has a laminated structure comprising a piezoelectric substance layer 12, and a pair of electrode layers 11A, 13 arranged on both front and rear sides of the piezoelectric substance layer. In the piezoelectric thin film resonator which generates acoustic vibration in the lamination direction in the lamination structure by an electric field applied by one pair of electrodes, at least one 11A out of the electrode layers is made of a diamond thin film. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007088819(A) 申请公布日期 2007.04.05
申请号 JP20050275190 申请日期 2005.09.22
申请人 SEIKO EPSON CORP 发明人 FURUHATA MAKOTO;FUJII SATORU
分类号 H03H9/17;H01L41/09;H01L41/18;H01L41/187;H01L41/22;H01L41/29 主分类号 H03H9/17
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