| 摘要 |
PROBLEM TO BE SOLVED: To provide forming method/device of a crystalline silicone thin film, with which a crystalline silicone thin film can inexpensively and safely be obtained under a comparatively low temperature and the crystalline silicone thin film which is easily termination-processed can be obtained from the crystalline silicone thin film. SOLUTION: Hydrogen gas is introduced into a deposition room 1 where a silicone sputter target T and an article to be deposited S are arranged. High frequency power is applied. Plasma whose ratio (Hα/SiH<SP>*</SP>) between emission spectrum intensity Hαof a hydrogen atom radical in a wavelength 656 nm in plasma emission and emission spectrum intensity SiH<SP>*</SP>of a sylane radical in the wavelength 414 nm is 0.3 to 1.3 is generated. The silicone sputter target T is chemically sputtered in plasma and the crystalline silicone thin film is formed on the article to be deposited S. In a termination processing room 10, a surface of the crystalline silicone thin film is termination-processed based on plasma for termination processing, which is generated by applying high frequency power to gas for termination processing. COPYRIGHT: (C)2007,JPO&INPIT
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