| 摘要 |
The magnetoresistive effect element comprises a pinned magnetic layer 16 having a multilayered synthetic antiferromagnet (SAF) structure, a nonmagnetic spacer layer 18 formed on the pinned magnetic layer 16 , a free magnetic layer 20 formed on the nonmagnetic spacer layer 18 and formed of a single ferromagnetic layer, a nonmagnetic spacer layer 22 formed on the free magnetic layer 20 , and a pinned magnetic layer 24 of a multilayered SAF structure formed on the nonmagnetic spacer layer 22 , wherein a magnetization direction of the ferromagnetic layer 16 c of the pinned magnetic layer 16 , which is nearest the free magnetic layer 20 , and a magnetization direction of the ferromagnetic layer 24 a of the pinned magnetic layer 24 , which is nearest the free magnetic layer 20 , are opposite to each other.
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