发明名称 Apparatus temperature control and pattern compensation
摘要 A film formation system 10 includes a processing chamber 15 bounded by sidewalls 18 and a top cover 11 . In one embodiment, a susceptor 16 is rotatably disposed in the system 10 , and overlaps with a first peripheral member 205 disposed around the sidewalls 18 . A radiant heating system 313 is disposed under the susceptor 305 to heat the substrate 19 . In another embodiment, the top cover 11 has equally spaced pyrometers 58 for measuring the temperature of the substrate 19 across a number of zones. The temperature of the substrate 19 is obtained from pyrometric data from the pyrometers 58.
申请公布号 US2007074665(A1) 申请公布日期 2007.04.05
申请号 US20050242299 申请日期 2005.09.30
申请人 APPLIED MATERIALS, INC. 发明人 CHACIN JUAN;HUNTER AARON;METZNER CRAIG;ANDERSON ROGER N.
分类号 C23C16/00 主分类号 C23C16/00
代理机构 代理人
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