| 摘要 |
A method of fabricating a semiconductor device having a fully silicided gate, the method includes: forming a gate insulation layer on a substrate; forming a polysilicon layer on the gate insulation film; transforming the polysilicon layer into a silicide layer; patterning the silicide layer to provide a gate electrode; forming a side wall spacer on both side walls of the gate electrode; source and drain regions on both sides of the gate electrode having the side wall spacer; and forming a silicide layer on at least a part of the source/drain regions.
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