发明名称 Semiconductor device having high-density contact holes with oval plane shape arranged to reduce malfunction resulting from bowing during etching
摘要 A semiconductor device includes a substrate on which a plurality of contact holes, a plane shape of each of which is a oval, are formed and contacts formed in each of the contact holes and having oval-shaped profiles that correspond to each of the holes. The position on the perimeter of each oval at which the separation width with an oval that is adjacent to that oval is a minimum is separated by a prescribed spacing from the intersection of the perimeter of that oval and the minor axis of that oval.
申请公布号 US2007075433(A1) 申请公布日期 2007.04.05
申请号 US20060518278 申请日期 2006.09.11
申请人 ELPIDA MEMORY, INC. 发明人 UEDA YASUHIKO
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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