发明名称 |
INTEGRATED CIRCUIT WITH SELF-ALIGNED LINE AND VIA |
摘要 |
An integrated circuit is provided having a base with a first dielectric layer formed thereon. A second dielectric layer is formed over the first dielectric layer. A third dielectric layer is formed in spaced-apart strips over the second dielectric layer. A first trench opening is formed through the first and second dielectric layers between the spaced-apart strips of the third dielectric layer. A second trench opening is formed contiguously with the first trench opening through the first dielectric layer between the spaced-apart strips of the third dielectric layer. Conductor metals in the trench openings form self-aligned trench interconnects.
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申请公布号 |
US2007075371(A1) |
申请公布日期 |
2007.04.05 |
申请号 |
US20060466018 |
申请日期 |
2006.08.21 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
LIM YEOW K.;CHA RANDALL C.L.;SEE ALEX;GOH WANG L. |
分类号 |
H01L23/62;H01L21/60;H01L23/522 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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