| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a large quantity of semiconductor nano wire elements eliminating a complicated nano wire positioning step and an SOI wafer at a low cost, with no necessity of forming an extremely fine pattern using electronic beams, and by forming a single crystal silicon nano wire by an easy method, transferring the nano wire separated from a substrate onto an other oxide film or a silicon substrate formed with an insulating film. SOLUTION: A manufacturing step of a nano wire element includes the steps of: forming a first thermal oxidation film on a single crystal silicon substrate (100) and forming the first thermal oxidation film into a pattern for securing a support structure region to support the nano wire region and the nano wire; dry-etching the silicon substrate; wet-etching the silicon substrate by anisotropical etching solution; forming a second thermal oxidation film on the silicon substrate; and removing all of the thermal oxidation films. COPYRIGHT: (C)2007,JPO&INPIT |
