发明名称 METHOD OF FORMING A CAVITY BY TWO-STEP ETCHING AND METHOD OF REDUCING DIMENSION OF A MEMS DEVICE
摘要 A method for reducing dimension of an MEMS device. A single crystalline substrate having a diaphragm is provided. A first-step anisotropic dry etching process is performed to form an opening corresponding to the diaphragm in the back surface, the anisotropic dry etching stopping on a specific lattice plane extending from the edge of the diaphragm. A second-step anisotropic wet etching process is performed to etch the single crystalline substrate along the specific lattice plane until the diaphragm is exposed to form a cavity having a diamond-like shape.
申请公布号 US2007077727(A1) 申请公布日期 2007.04.05
申请号 US20060308303 申请日期 2006.03.15
申请人 HUANG TER-CHANG;LIN HUNG-YI;HSU WEN-SYANG 发明人 HUANG TER-CHANG;LIN HUNG-YI;HSU WEN-SYANG
分类号 H01L21/76 主分类号 H01L21/76
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