发明名称 |
METHOD OF FORMING A CAVITY BY TWO-STEP ETCHING AND METHOD OF REDUCING DIMENSION OF A MEMS DEVICE |
摘要 |
A method for reducing dimension of an MEMS device. A single crystalline substrate having a diaphragm is provided. A first-step anisotropic dry etching process is performed to form an opening corresponding to the diaphragm in the back surface, the anisotropic dry etching stopping on a specific lattice plane extending from the edge of the diaphragm. A second-step anisotropic wet etching process is performed to etch the single crystalline substrate along the specific lattice plane until the diaphragm is exposed to form a cavity having a diamond-like shape.
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申请公布号 |
US2007077727(A1) |
申请公布日期 |
2007.04.05 |
申请号 |
US20060308303 |
申请日期 |
2006.03.15 |
申请人 |
HUANG TER-CHANG;LIN HUNG-YI;HSU WEN-SYANG |
发明人 |
HUANG TER-CHANG;LIN HUNG-YI;HSU WEN-SYANG |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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