发明名称 Interposer and electronic device fabrication method
摘要 An interposer 2 comprising a base 10 formed of a plurality of resin layers 26, 34, 42, 52, 56 ; a thin-film capacitor 12 buried in the base 10 , including a lower electrode 20 , a capacitor dielectric film 22 and an upper electrode 24 ; a first through-electrode 14 b formed through the base 10 and electrically connected to the upper electrode 24 of the thin-film capacitor 12 ; and a second through-electrode 14 a formed through the base 10 and electrically connected to the lower electrode 20 of the thin-film capacitor 12 , further comprising: an interconnection 48 buried in the base 10 and electrically connected to the respective upper electrodes 24 of a plurality of the thin-film capacitors 12 , a plurality of the first through-electrodes 14 b being electrically connected to the upper electrodes 24 of said plurality of the thin-film capacitors 12 via the interconnection 48 , and said plurality of the first through-electrodes 14 b being electrically interconnected by the interconnections 48.
申请公布号 US2007076348(A1) 申请公布日期 2007.04.05
申请号 US20060339661 申请日期 2006.01.26
申请人 FUJITSU LIMITED 发明人 SHIOGA TAKESHI;ISHIZUKI YOSHIKATSU;BANIECKI JOHN D.;KURIHARA KAZUAKI
分类号 H01G4/236 主分类号 H01G4/236
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