A MOSFET comprising an epitaxial layer of a first conductivity type, a body region of a second conductivity type and a source region of the first conductivity type, wherein the gate (694) of said MOSFET comprises polysilicon embedded with a polysilicon etch stop (640).
申请公布号
WO2007036793(A2)
申请公布日期
2007.04.05
申请号
WO2006IB02703
申请日期
2006.09.29
申请人
ANALOG POWER INTELLECTUAL PROPERTIES LIMITED;SIN, KIN ON JOHNNY;LAI, MAU LAM TOMMY;CHAU, DUC QUANG
发明人
SIN, KIN ON JOHNNY;LAI, MAU LAM TOMMY;CHAU, DUC QUANG