Memory device e.g. nitride read only memory, has memory cells to which programming pulse is applied, where pulse comprises profile that depends on position of respective strip conductors at which cells are attached

摘要

The device (1) has a memory cell field (2) with a memory region (5). Memory cells are programmed such that an electrical programming pulse is applied by respective strip conductor (3). The device is formed so that the programming pulse is applied for programming the cells, where the pulse comprises a pulse profile. The profile depends on the position of the respective conductors at which the cells are attached. Independent claims are also included for the following: (1) a method for operating a memory device (2) a method for configuring and operating a memory device.