METHODS FOR FORMING A TRANSISTOR AND MODULATING CHANNEL STRESS
摘要
Methods are provided for manufacturing transistors and altering the stress in the channel region of a single transistor. One or more parameters that are effect stress in the channel region are altered for a single transistor to increase or decrease the channel stress in PMOS and NMOS transistors.
申请公布号
WO2007002215(A3)
申请公布日期
2007.04.05
申请号
WO2006US24174
申请日期
2006.06.20
申请人
APPLIED MATERIALS, INC.;THIRUPAPULIYUR, SUNDERRAJ;NOURI, FARAN;WASHINGTON, LORI
发明人
THIRUPAPULIYUR, SUNDERRAJ;NOURI, FARAN;WASHINGTON, LORI
