发明名称 ANTIREFLECTIVE HARD MASK COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a new composition and a new method for manufacturing an integrated circuit. <P>SOLUTION: The invention includes new organic-containing compositions that can function as an antireflective layer for an overcoated photoresist. Compositions of the invention also can serve effectively as a hard mask layer by exhibiting a sufficient plasma etch selectivity from an undercoated layer. Preferred compositions of the invention have a high Si content and comprise a blend of distinct resins. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007086773(A) 申请公布日期 2007.04.05
申请号 JP20060230230 申请日期 2006.08.28
申请人 ROHM & HAAS ELECTRONIC MATERIALS LLC 发明人 GRONBECK DANA A;AMY M KUOKKU;TRUONG CHI Q;GALLAGHER MICHAEL K;ZAMPINI ANTHONY
分类号 G03F7/11;H01L21/027;H01L21/3065 主分类号 G03F7/11
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