| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which normally off type is achieved while suppressing increase in on resistance, and to provide its fabrication process. SOLUTION: The semiconductor device comprises a first layer of a first nitride semiconductor having a step on the upper surface, a second layer of a second nitride semiconductor having a band gap larger than that of the first nitride semiconductor formed on the first layer while covering the step where the thickness of the step above the side face is smaller than the thickness above the major surfaces on the upper and lower sides of the side face, a gate electrode provided on the second layer above the side face of the step, a source electrode provided on the second layer above any one of the major surfaces on the upper and lower sides of the side face, and a drain electrode provided on the second layer above the other of the major surfaces on the upper and lower sides of the side face. COPYRIGHT: (C)2007,JPO&INPIT
|
