发明名称 PROCESS OF MAKING SEMICONDUCTOR LENS AND SEMICONDUCTOR LENS
摘要 PROBLEM TO BE SOLVED: To provide a process of making a semiconductor lens that can easily form the semiconductor lens in an arbitrary shape irrelevantly to the thickness of a semiconductor substrate and the semiconductor lens in the desired shape which targets a terahertz wave as an electromagnetic wave to be transmitted and can be made low-cost. SOLUTION: The process includes an anode forming step of forming an anode 11 on one surface side of the semiconductor substrate 10, an anodizing step of feeding a current between a cathode 25 arranged on the other surface side of the semiconductor substrate and the anode 11 in an electrolyte B to form a porous part 14 as a removal region on the other surface side of the semiconductor substrate 10, and a porous part removing step of removing the porous part 14. A light quantity distribution of light with which the other surface side of the semiconductor substrate 10 is irradiated in the anodizing step is determined according to the desired lens shape to obtain a distribution of holes, induced in the semiconductor substrate 10 in the anodizing step, corresponding to the desired lens shape. The cathode 25 serves as a mask which is so designed as to form the light quantity distribution. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007086766(A) 申请公布日期 2007.04.05
申请号 JP20060228274 申请日期 2006.08.24
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 HONDA YOSHIAKI;NISHIKAWA NAOYUKI;UETSU TOMOHIRO
分类号 G02B3/00 主分类号 G02B3/00
代理机构 代理人
主权项
地址