| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon single crystal having a high dislocation-free rate. SOLUTION: The method for manufacturing the silicon single crystal is based on the Czochralski method, and comprises a process for preparing a seed crystal 1 with a crystal axis <110> by inclining the crystal axis at an angle of 0.5-5.0°and a squeezing process of bringing the seed crystal 1 into contact with a melt and varying the crystal shape into a rosary-like shape. COPYRIGHT: (C)2007,JPO&INPIT
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