发明名称 IMPROVED CHAMBER FOR A MICROELECTROMECHANICAL DEVICE
摘要 A method for forming an improved chamber for a micro-electromechanical device includes depositing a sacrificial layer on a substrate; depositing a masking layer on a surface of the sacrificial layer; removing at least one predetermined portion of the masking layer down to the sacrificial layer to form an etch pattern; isotropically etching the etch pattern into the sacrificial layer to a partial depth thereof and partially undercutting a remaining portion of the mask material; anisotropically etching the etch pattern into the sacrificial layer to the substrate to form a recessed pattern in the sacrificial layer with at least one anchor region on the substrate surrounding at least one plateau of sacrificial layer; depositing a structural layer over the at least one plateau and filling the recessed pattern; providing an access port to the sacrificial layer; and removing the remaining sacrificial layer.
申请公布号 WO2007018875(A8) 申请公布日期 2007.04.05
申请号 WO2006US26520 申请日期 2006.07.10
申请人 EASTMAN KODAK COMPANY;DEBAR, MICHAEL JAMES 发明人 DEBAR, MICHAEL JAMES
分类号 B81C1/00 主分类号 B81C1/00
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