| 摘要 |
In a method of manufacturing a semiconductor device, a lower electrode of a capacitor is formed above a semiconductor substrate. Thermal treatment is carried out to a base layer, which includes the lower electrode, in an atomic layer deposition apparatus. A dielectric film is formed on the base layer after the thermal treatment by an atomic layer deposition method without exposing the substrate to air. An upper electrode of the capacitor is formed on the dielectric film.
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