Production of a semiconductor component used in the production of integrated circuits comprises selectively forming a first etch stop layer over a first or second transistor element and forming a second contact etch stop layer

摘要

Production of a semiconductor component (250) comprises selectively forming a first etch stop layer over a first or second transistor element (200n, 200p), forming a first contact etch stop layer (216) over the transistor elements, selectively removing a region of the contact stop layer and forming a second contact etch stop layer (219) over the transistor elements. An independent claim is also included for a semiconductor component produced using the above process.