| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the resolution in a semiconductor image sensor and simplify the operational expression for a color signal. <P>SOLUTION: This image sensor having a plurality of pixels comprises a photoelectric converting means and an MOS transistor for selectively reading the photoelectric converting means, and comprises a first pixel group wherein a plurality of pixels 63A are two-dimensionally arranged in the horizontal direction and vertical direction respectively with a predetermined pitch, and a second pixel group wherein a plurality of pixels 63B are two-dimensionally arranged in the state wherein they are displaced in both of the horizontal direction and vertical direction by about 1/2 of the pitch. The first pixel group and the second pixel group have respective semiconductor regions with different depths contributing to the photoelectric conversion. <P>COPYRIGHT: (C)2007,JPO&INPIT |
