| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device using a uniform ridge having a forward taper-type ridge and highly symmetric property. SOLUTION: A mask pattern 11 is formed on a substrate 10 and an isotropic wet etching which does not have dependency is performed on the face orientation of crystal including at least a ä111} B face. Then, the selective etching which is selectively carried out is performed on the face orientation including at least the ä111} B face. Therefore, the substrate 10 having a ridge 10a where both sides are constituted of the ä111} B faces is manufactured by those two types of etchings. Thus, an SDH structure is formed on the substrate 10, and a semiconductor light emitting device is manufactured. COPYRIGHT: (C)2007,JPO&INPIT
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