| 摘要 |
PROBLEM TO BE SOLVED: To provide radical processing equipment and method which can treat the surface of a processed substrate uniformly by preventing generation of uneven gas flow in the vicinity of the surface of the processed substrate even when gas is introduced at a high flow rate thereby equalizing spatial distribution of radical diffuse density. SOLUTION: The processing equipment comprises a treatment chamber 101, a gas discharge means 106, a gas introduction means 105, a neutral radical generating means 108 for generating neutral radicals in an upper radical generation region 111 in the treatment chamber 101, and a means 103 installed in the upstream of gas flow as compared with the radical generation region 111 and supporting a processed substrate 102 wherein the gas introduction means 105 is provided between the radical generation region 111 and the processed substrate supporting means 103. COPYRIGHT: (C)2007,JPO&INPIT
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