| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having well controlled crystal orientations of respective layers constituting a ferroelectric capacitor. SOLUTION: The semiconductor device includes a substrate 10, a first insulation layer 26 provided on the substrate 10, a groove 24 provided on the first insulation layer 26, a barrier layer 12 provided at least along a side face and a bottom of the groove 24, a second insulation layer 22 provided on the barrier layer 12, a first electrode 32 provided at least on the barrier layer 12 and the second insulation layer 22, a ferroelectric layer 34 provided above the first electrode 32, and a second electrode 36 provided above the ferroelectric layer 34. COPYRIGHT: (C)2007,JPO&INPIT
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