| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of inhibiting a heat generation even in a high-output region of 150 mW or more, and making a high differential-efficiency and a low device-resistance compatible. SOLUTION: An n-type GaAs/AlGaAs buffer layer 2, an n-type AlGaAs first clad layer 3, a non-doped quantum well active layer 4, a p-type AlGaAs lower clad layer 5a, a p-type GaAs etching-stop layer 6, a p-type AlGaAs upper clad layer 5b, a p-type AlGaAs intermediate layer 7, and a p-type GaAs contact layer 8, are formed successively on an n-type GaAs (100) just substrate 1. The Al composition ratio of the p-type AlGaAs intermediate layer 7 is made smaller than that of the p-type AlGaAs upper clad layer 5b, and made larger than that of the p-type GaAs contact layer 8. COPYRIGHT: (C)2007,JPO&INPIT
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