| 发明名称 |
Reduced current phase-change memory device |
| 摘要 |
A phase-change memory device more precisely controls electrical current required to accomplish a phase change by using contact holes that extend between phase change layers that are sized differently from each other.
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| 申请公布号 |
US2007075304(A1) |
申请公布日期 |
2007.04.05 |
| 申请号 |
US20060440236 |
申请日期 |
2006.05.24 |
| 申请人 |
CHANG HEON Y;HONG SUK KYOUNG;PARK HAE C |
发明人 |
CHANG HEON Y.;HONG SUK KYOUNG;PARK HAE C. |
| 分类号 |
H01L29/04 |
主分类号 |
H01L29/04 |
| 代理机构 |
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