ORGANIC MEMORY DEVICE COMPRISING ACTIVE MEMORY REGION FORMED IN EMBOSSED STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide an organic memory device with improved reliability by reducing the variance and length of switching delay time.

SOLUTION: This organic memory device comprises a substrate, a first electrode formed on the substrate, an organic memory layer formed on the first electrode, a second electrode formed on the organic memory layer, and an embossed structure forming an active memory region in the organic memory layer. The embossed structure is composed of uniform size organic or inorganic particles distributed between the substrate and the first electrode. The diameter of the particles is from 10 nm to 500 nm.

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