| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a target which has a low resistivity, a high relative density to theoretical density, and high strength, in which the content of indium is reduced and abnormal discharge generated when a transparent conductive film is formed by a sputtering method is suppressed so as to perform stable sputtering, and to provide a producing method therefor. <P>SOLUTION: The sputtering target is characterized in that it contains indium, tin, zinc and oxygen and only a peak ascribed to a bixbyite structure compound is practically observed by X-ray diffraction (XRD). <P>COPYRIGHT: (C)2007,JPO&INPIT |
