| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element of high yield, capable of suppressing secular degradation in light emission output and rising of a driving voltage. <P>SOLUTION: On a semiconductor substrate 1 of the semiconductor light emitting element, at least an n-type clad layer 3, an active layer 4, a p-type clad layer 5, and a p-type GaP current dispersion layer 60, are crystallized and grown. The side close to the p-type clad layer 5 of the p-type GaP current dispersion layer 60 is a first p-type GaP current dispersion layer 9 whose main dopant is Mg. The side away from the p-type clad layer 5 is a second p-type GaP current dispersion layer 10 whose main dopant is Zn. The main dopant of the p-type clad layer 5 is Mg. <P>COPYRIGHT: (C)2007,JPO&INPIT |
