| 摘要 |
PROBLEM TO BE SOLVED: To provide a member for heat treating a semiconductor substrate which is formed by cutting a silicon single crystal ingot, is suppressed in deformation, and has durability. SOLUTION: In the member for heat treating a semiconductor substrate and consisting of silicon single crystal, a member is used by cutting a silicon single crystal ingot 2 with such an angle that an azimuthal Schmidt factor of decomposition shearing stress in the [001] direction (A=0°, D=0°) is minimum, falls within±15°from 45°in a direction A, and from 54.7°in a direction D. COPYRIGHT: (C)2007,JPO&INPIT |
