| 摘要 |
PROBLEM TO BE SOLVED: To provide an extremely small and inexpensive gyro sensor manufactured by a thin film deposition technique using a semiconductor process and an MEMS process. SOLUTION: Detecting means is formed with a solid electrolyte 12 is formed on a substrate, having an ion moved by an electric field, and electrodes 14a, 14b capable of impressing an alternating current electric field are provided on an upper face of the solid electrolyte 12, and further detecting means is provided for detecting a moving route change of the ion in the solid electrolyte 12 due to Coriolis force corresponding to an angular velocity change, as a change of a resistance value. The gyro sensor calculates an angular velocity, based on the resistance change value. COPYRIGHT: (C)2007,JPO&INPIT
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