发明名称 CMP Slurry, Preparation Method Thereof and Method of Polishing Substrate Using the Same
摘要 A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising the steps of: preparing polishing particles comprising organically modified silica; converting the polishing particles into an aqueous state; and adding pure water, a hydrophilic additive and a dispersing agent to the polishing particles. The polishing particles can be synthesized using a sol-gel process. According to the invention, a slurry having excellent polishing properties can be prepared, in which the surface properties of colloidal silica are changed to control the physical properties of the polishing particles and which can ensure a desired CMP removal rate while minimizing the occurrence of scratches.
申请公布号 US2007075291(A1) 申请公布日期 2007.04.05
申请号 US20060421965 申请日期 2006.06.02
申请人 PAIK UN G;PARK JEA G;KIM SANG K;KIM YE H;SUH MYOUNG W;KIM DAE H 发明人 PAIK UN G.;PARK JEA G.;KIM SANG K.;KIM YE H.;SUH MYOUNG W.;KIM DAE H.
分类号 C09K13/00;B44C1/22;C03C15/00;C23F1/00;H01L21/461 主分类号 C09K13/00
代理机构 代理人
主权项
地址