| 发明名称 |
Growth method of nitride semiconductor layer and light emitting device using the growth method |
| 摘要 |
The present invention relates to a growth method of nitride semiconductor layer comprising a first step for growing a first nitride 5 semiconductor layer on an Al<SUB>x</SUB>Ga<SUB>y</SUB>In<SUB>1-x-y</SUB>N(0<-x<1, 0<y<1, 0<x+y<1) layer, a second step for reducing the thickness of the first nitride semiconductor layer by growth interruption and, a third step for growing a second nitride semiconductor layer having a band gap energy higher than that of the first nitride semiconductor layer on the first nitride semiconductor layer with the to reduced thickness and a light emitting device using the growth method.
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| 申请公布号 |
US2007075307(A1) |
申请公布日期 |
2007.04.05 |
| 申请号 |
US20040596126 |
申请日期 |
2004.10.20 |
| 申请人 |
SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION |
发明人 |
YOON EUIJOON;KWON SOON-YONG;MOON PILKYUNG |
| 分类号 |
H01L31/00;H01L21/20;H01L21/205;H01L29/06;H01L33/06;H01L33/32;H01L33/42 |
主分类号 |
H01L31/00 |
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