| 摘要 |
A microwave is radiated into a processing chamber ( 1 ) from a planar antenna member of an antenna ( 7 ) through a dielectric plate ( 6 ). With this, a C<SUB>5</SUB>F<SUB>8 </SUB>gas supplied into the processing chamber ( 1 ) from a gas supply member ( 3 ) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C<SUB>5</SUB>F<SUB>8 </SUB>gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.
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