发明名称 |
Process to manufacture a semiconductor component with aperture cut through a dielectric material stack |
摘要 |
<p>In a process to manufacture a semiconductor component, an aperture is cut through a dielectric material stack formed over a metal zone. The metal zone has a conducting covering layer that forms a dielectric layered stack. The cover layer is etched through a first aperture, while the cover layer remains in place. The first aperture is then filled with a barrier material and a metal e.g. copper.</p> |
申请公布号 |
DE102005046975(A1) |
申请公布日期 |
2007.04.05 |
申请号 |
DE20051046975 |
申请日期 |
2005.09.30 |
申请人 |
ADVANCED MICRO DEVICES INC. |
发明人 |
LEHR, MATTHIAS;KOSCHINSKY, FRANK;NOPPER, MARKUS |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|