发明名称 Process to manufacture a semiconductor component with aperture cut through a dielectric material stack
摘要 <p>In a process to manufacture a semiconductor component, an aperture is cut through a dielectric material stack formed over a metal zone. The metal zone has a conducting covering layer that forms a dielectric layered stack. The cover layer is etched through a first aperture, while the cover layer remains in place. The first aperture is then filled with a barrier material and a metal e.g. copper.</p>
申请公布号 DE102005046975(A1) 申请公布日期 2007.04.05
申请号 DE20051046975 申请日期 2005.09.30
申请人 ADVANCED MICRO DEVICES INC. 发明人 LEHR, MATTHIAS;KOSCHINSKY, FRANK;NOPPER, MARKUS
分类号 H01L21/768 主分类号 H01L21/768
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